◈ Title : PRAM (Phase-change Random Access Memory): from boosting the performance to creating new applications
◈ Speaker : Dr. DAEWON  HA (Samsung Electronics)
◈ Date & Time : Friday,  June  3, 2011 (14:00pm ~ 15:30pm)
◈ Place : LG Research Building, Room #101
◈ Host : Prof.  Jeong-Soo Lee (Tel. 2380)
◈ Abstract : As the conventional memories approach their physical limitation for scaling and              reliability, several alternative memory concepts have been investigated. One of the most promising candidates to replace the conventional memories is the phase change random access memory (PRAM) mainly due to its small cell size, fast read and write     speed, good cycling endurance and high temperature data retention time, and so on.
 In this seminar, I will explain and compare the basic PRAM cell operation from conventional memories such as DRAM and Flash. Chip performance benefits from the   unique PRAM cell features will be discussed. Also, the key technologies will be described in terms of boosting the performance and the memory cell density, together with creating new applications. Finally, the physical failure mechanisms for intrinsic reliability including high temperature data retention (HTDR), cycling endurance, and thermal disturbance will be discussed.